Search results for "Magnetic device"
showing 7 items of 7 documents
Magnetic Stochastic Resonance in systems described by Dynamic Preisach Model
2008
Stochastic resonance (SR) is generally considered as an enhancement of the system response for certain finite values of the noise strength. In particular the signal to noise ratio (SNR) and the signal amplification show a maximum as a function of the noise intensity. This effect has been experimentally observed in many physical systems and also in magnetic systems. However, as far as magnetic systems are concerned, the dynamic features of the systems have been neglected and it has been assumed that the typical relaxation time is negligible. However this is clearly a rough approximation. In order to clarify this relation, in this paper we numerically study magnetic stochastic resonance in se…
Field-driven domain wall motion under a bias current in the creep andflow regimes in Pt/[CoSiB/Pt](N) nanowires
2016
AbstractThe dynamics of magnetic domain wall (DW) in perpendicular magnetic anisotropy Pt/[CoSiB/Pt]N nanowires was studied by measuring the DW velocity under a magnetic field (H) and an electric current (J) in two extreme regimes of DW creep and flow. Two important findings are addressed. One is that the field-driven DW velocity increases with increasing N in the flow regime, whereas the trend is inverted in the creep regime. The other is that the sign of spin current-induced effective field is gradually reversed with increasing N in both DW creep and flow regimes. To reveal the underlying mechanism of new findings, we performed further experiment and micromagnetic simulation, from which w…
Analysis of the finite difference time domain technique to solve the Schrödinger equation for quantum devices
2004
An extension of the finite difference time domain is applied to solve the Schrödinger equation. A systematic analysis of stability and convergence of this technique is carried out in this article. The numerical scheme used to solve the Schrödinger equation differs from the scheme found in electromagnetics. Also, the unit cell employed to model quantum devices is different from the Yee cell used by the electrical engineering community. A bound for the time step is derived to ensure stability. Several numerical experiments in quantum structures demonstrate the accuracy of a second order, comparable to the analysis of electromagnetic devices with the Yee cell. a!Electronic mail: Antonio.Sorian…
Heavy metal exposure in patients suffering from electromagnetic hypersensitivity
2009
Abstract Background Risks from electromagnetic devices are of considerable concern. Electrohypersensitive (EHS) persons attribute a variety of rather unspecific symptoms to the exposure to electromagnetic fields. The pathophysiology of EHS is unknown and therapy remains a challenge. Objectives Heavy metal load has been discussed as a potential factor in the symptomatology of EHS patients. The main objective of the study was to test the hypothesis of a link between EHS and heavy metal exposure. Methods We measured lead, mercury and cadmium concentrations in the blood of 132 patients ( n = 42 males and n = 90 females) and 101 controls ( n = 34 males and n = 67 females). Results Our result…
A dq axis theory of the magnetic, thermal, and mechanical properties of Curie motor
2011
A dq axis theory of a thermomagnetic Curie motor is presented. This theory allows one to estimate the performances of a Curie motor from its geometrical, magnetic, and thermal properties. The proposed approach shows that the thermomagnetic Curie motor is equivalent from a magnetic point of view to a dc electric machine. The physical meaning of the parameters used in the dq theory of Curie motor is explicated. The theory is validated by using experimental data.
Magnetic domain-wall racetrack memory for high density and fast data storage
2012
The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm …
Strain-controlled domain wall injection into nanowires for sensor applications
2021
We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$, $Ni$ and $Ni_{82}Fe_{18}$ samples with in-plane magnetization and different magnetoelastic coupling are deposited. In these samples, we measure the magnetic field required for the injection of a DW, by imaging differential contrast in a magneto-optical Kerr microscope. We find that strain increases t…